Lattice-mismatched GaInP LED devices and methods of fabricating same

Mascarenhas, Angelo; Steiner, Myles A; Bhusal, Lekhnath; Zhang, Yong

Title: Lattice-mismatched GaInP LED devices and methods of fabricating same

Patent · Tue Oct 21 00:00:00 EDT 2014

OSTI ID:1160241

Mascarenhas, Angelo; Steiner, Myles A; Bhusal, Lekhnath; Zhang, Yong

A method (100) of fabricating an LED or the active regions of an LED and an LED (200). The method includes growing, depositing or otherwise providing a bottom cladding layer (208) of a selected semiconductor alloy with an adjusted bandgap provided by intentionally disordering the structure of the cladding layer (208). A first active layer (202) may be grown above the bottom cladding layer (208) wherein the first active layer (202) is fabricated of the same semiconductor alloy, with however, a partially ordered structure. The first active layer (202) will also be fabricated to include a selected n or p type doping. The method further includes growing a second active layer (204) above the first active layer (202) where the second active layer (204) Is fabricated from the same semiconductor alloy.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC36-08G028308

Assignee:: Alliance for Sustainable Energy, LLC (Golden, CO)

Patent Number(s):: 8,866,146

Application Number:: 13/262,509

OSTI ID:: 1160241

Resource Relation:: Patent File Date: 2010 Apr 15

Country of Publication:: United States

Language:: English

References (20)

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