The Structure and Properties of Amorphous Indium Oxide

Buchholz, D. Bruce; Ma, Qing; Alducin, Diego; Ponce, Arturo; Jose-Yacaman, Miguel; Khanal, Rabi; Medvedeva, Julia E.; Chang, Robert P. H.

doi:10.1021/cm502689x

Title: The Structure and Properties of Amorphous Indium Oxide

Journal Article · Wed Sep 10 00:00:00 EDT 2014 · Chemistry of Materials

DOI:https://doi.org/10.1021/cm502689x· OSTI ID:1157593

Buchholz, D. Bruce ^[1]; Ma, Qing ^[2]; Alducin, Diego ^[3]; Ponce, Arturo ^[3]; Jose-Yacaman, Miguel ^[3]; Khanal, Rabi ^[4]; Medvedeva, Julia E. ^[4]; Chang, Robert P. H. ^[1]

Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
DND-CAT, Northwestern Synchrotron Research Center at the Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, United States
Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States
Department of Physics, Missouri University of Science & Technology, Rolla, Missouri 65409-0640, United States

View Journal Article

Cite

Export

Save

Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-06CH11357; FG02-06ER46320

OSTI ID:: 1157593

Journal Information:: Chemistry of Materials, Journal Name: Chemistry of Materials Vol. 26 Journal Issue: 18; ISSN 0897-4756

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 139 works

Citation information provided by
Web of Science

References (40)

Transparent Conducting Oxides for Photovoltaics Fortunato, Elvira; Ginley, David; Hosono, Hideo MRS Bulletin, Vol. 32, Issue 03, p. 242-247 https://doi.org/10.1557/mrs2007.29	journal	March 2007
ATHENA , ARTEMIS , HEPHAESTUS : data analysis for X-ray absorption spectroscopy using IFEFFIT Ravel, B.; Newville, M. Journal of Synchrotron Radiation, Vol. 12, Issue 4 https://doi.org/10.1107/S0909049505012719	journal	June 2005
Generalized Gradient Approximation Made Simple Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868 https://doi.org/10.1103/PhysRevLett.77.3865	journal	October 1996
Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films Buchholz, D. B.; Proffit, D. E.; Wisser, M. D. Progress in Natural Science: Materials International, Vol. 22, Issue 1 https://doi.org/10.1016/j.pnsc.2011.12.001	journal	February 2012
A new route to charge distributions in ionic solids Hoppe, Rudolf; Voigt, Stephan; Glaum, Holger Journal of the Less Common Metals, Vol. 156, Issue 1-2 https://doi.org/10.1016/0022-5088(89)90411-6	journal	December 1989
The electromagnetic interference shielding effect of indium–zinc oxide/silver alloy multilayered thin films Kim, Won Mok; Young Ku, Dae; Lee, In-kyu Thin Solid Films, Vol. 473, Issue 2 https://doi.org/10.1016/j.tsf.2004.08.083	journal	February 2005
Control and Characterization of the Structural, Electrical, and Optical Properties of Amorphous Zinc−Indium−Tin Oxide Thin Films Buchholz, D. Bruce; Liu, Jun; Marks, Tobin J. ACS Applied Materials & Interfaces, Vol. 1, Issue 10 https://doi.org/10.1021/am900321f	journal	September 2009
Extended x-ray-absorption fine-structure technique. III. Determination of physical parameters Stern, E. A.; Sayers, D. E.; Lytle, F. W. Physical Review B, Vol. 11, Issue 12 https://doi.org/10.1103/PhysRevB.11.4836	journal	June 1975
Differences between amorphous indium oxide thin films Buchholz, D. Bruce; Zeng, Li; Bedzyk, Michael J. Progress in Natural Science: Materials International, Vol. 23, Issue 5 https://doi.org/10.1016/j.pnsc.2013.08.004	journal	October 2013
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set Kresse, G.; Furthmüller, J. Computational Materials Science, Vol. 6, Issue 1, p. 15-50 https://doi.org/10.1016/0927-0256(96)00008-0	journal	July 1996
Electronic origin of the conductivity imbalance between covalent and ionic amorphous semiconductors Deng, Hui-Xiong; Wei, Su-Huai; Li, Shu-Shen Physical Review B, Vol. 87, Issue 12 https://doi.org/10.1103/PhysRevB.87.125203	journal	March 2013
Characterization of amorphous In ₂ O ₃ : An ab initio molecular dynamics study Aliano, Antonio; Catellani, Alessandra; Cicero, Giancarlo Applied Physics Letters, Vol. 99, Issue 21 https://doi.org/10.1063/1.3664224	journal	November 2011
XAFS Study on Silica Glasses Irradiated by HighEnergy Particles Yoshida, Tomoko; Tanabe, Tetsuo; Yoshida, Hisao Physica Scripta https://doi.org/10.1238/Physica.Topical.115a00435	journal	January 2005
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors Nomura, Kenji; Ohta, Hiromichi; Takagi, Akihiro Nature, Vol. 432, Issue 7016, p. 488-492 https://doi.org/10.1038/nature03090	journal	November 2004
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Electronic structure of amorphous indium oxide transparent conductors Rosen, J.; Warschkow, O. Physical Review B, Vol. 80, Issue 11 https://doi.org/10.1103/PhysRevB.80.115215	journal	September 2009
Ab initio molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium Kresse, G.; Hafner, J. Physical Review B, Vol. 49, Issue 20, p. 14251-14269 https://doi.org/10.1103/PhysRevB.49.14251	journal	May 1994
Local coordination structure and electronic structure of the large electron mobility amorphous oxide semiconductor In-Ga-Zn-O: Experiment and ab initio calculations Nomura, Kenji; Kamiya, Toshio; Ohta, Hiromichi Physical Review B, Vol. 75, Issue 3 https://doi.org/10.1103/PhysRevB.75.035212	journal	January 2007
Molecular dynamics study of amorphous Ga-doped In ₂ O ₃ : A promising material for phase change memory devices Ramzan, M.; Kaewmaraya, T.; Ahuja, R. Applied Physics Letters, Vol. 103, Issue 7 https://doi.org/10.1063/1.4818788	journal	August 2013
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application Hosono, Hideo Journal of Non-Crystalline Solids, Vol. 352, Issue 9-20 https://doi.org/10.1016/j.jnoncrysol.2006.01.073	journal	June 2006
Amorphous oxide TFT and their applications in electrophoretic displays Ito, Manabu; Kon, Masato; Miyazaki, Chihiro physica status solidi (a), Vol. 205, Issue 8 https://doi.org/10.1002/pssa.200778910	journal	August 2008
Tin doped indium oxide thin films: Electrical properties Bel Hadj Tahar, Radhouane; Ban, Takayuki; Ohya, Yutaka Journal of Applied Physics, Vol. 83, Issue 5 https://doi.org/10.1063/1.367025	journal	March 1998
Evidence for subpicosecond thermal spikes in the formation of tetrahedral amorphous carbon Marks, N. A. Physical Review B, Vol. 56, Issue 5 https://doi.org/10.1103/PhysRevB.56.2441	journal	August 1997
Universal Medium-Range Order of Amorphous Metal Oxides Nishio, Kengo; Miyazaki, Takehide; Nakamura, Hisao Physical Review Letters, Vol. 111, Issue 15 https://doi.org/10.1103/PhysRevLett.111.155502	journal	October 2013
Amorphous silicon studied by ab initio molecular dynamics: Preparation, structure, and properties Štich, I.; Car, R.; Parrinello, M. Physical Review B, Vol. 44, Issue 20 https://doi.org/10.1103/PhysRevB.44.11092	journal	November 1991
High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach Ryu, Min Ki; Yang, Shinhyuk; Park, Sang-Hee Ko Applied Physics Letters, Vol. 95, Issue 7 https://doi.org/10.1063/1.3206948	journal	August 2009
Ab initiomolecular dynamics for liquid metals Kresse, G.; Hafner, J. Physical Review B, Vol. 47, Issue 1, p. 558-561 https://doi.org/10.1103/PhysRevB.47.558	journal	January 1993
Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors Noh, Hyeon-Kyun; Chang, K. J.; Ryu, Byungki Physical Review B, Vol. 84, Issue 11 https://doi.org/10.1103/PhysRevB.84.115205	journal	September 2011
Transparent Conducting Oxides Ginley, David S.; Bright, Clark MRS Bulletin, Vol. 25, Issue 8 https://doi.org/10.1557/mrs2000.256	journal	August 2000
First-principle study of electronic structure of Sn-doped amorphous In2O3 and the role of O-deficiency Kim, Maengsuk; Kang, Il Joon; Park, Chul Hong Current Applied Physics, Vol. 12 https://doi.org/10.1016/j.cap.2012.05.038	journal	December 2012
Study on In–Zn–Sn–O and In–Sn–Zn–O films deposited on PET substrate by magnetron co-sputtering system Lee, D. Y.; Lee, J. R.; Lee, G. H. Surface and Coatings Technology, Vol. 202, Issue 22-23 https://doi.org/10.1016/j.surfcoat.2008.06.091	journal	August 2008
Carrier Generation and Inherent Off-Stoichiometry in Zn, Sn Codoped Indium Oxide (ZITO) Bulk and Thin-Film Specimens Harvey, Steven P.; Mason, Thomas O.; Buchholz, D. Bruce Journal of the American Ceramic Society, Vol. 91, Issue 2 https://doi.org/10.1111/j.1551-2916.2007.02135.x	journal	February 2008
Theoretical approaches to x-ray absorption fine structure Rehr, J. J.; Albers, R. C. Reviews of Modern Physics, Vol. 72, Issue 3 https://doi.org/10.1103/RevModPhys.72.621	journal	July 2000
Structural, elastic, vibrational and electronic properties of amorphous Al ₂ O ₃ from ab initio calculations Davis, Sergio; Gutiérrez, Gonzalo Journal of Physics: Condensed Matter, Vol. 23, Issue 49 https://doi.org/10.1088/0953-8984/23/49/495401	journal	November 2011
Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques Kulkarni, A. K.; Schulz, Kirk H.; Lim, T. S. Thin Solid Films, Vol. 345, Issue 2 https://doi.org/10.1016/S0040-6090(98)01430-8	journal	May 1999
The Remarkable Thermal Stability of Amorphous In-Zn-O Transparent Conductors Taylor, Matthew P.; Readey, Dennis W.; van Hest, Maikel F. A. M. Advanced Functional Materials, Vol. 18, Issue 20 https://doi.org/10.1002/adfm.200700604	journal	October 2008
A Modified Transparent Conducting Oxide for Flat Panel Displays Only Chae, Gee Sung Japanese Journal of Applied Physics, Vol. 40, Issue Part 1, No. 3A https://doi.org/10.1143/JJAP.40.1282	journal	March 2001
Chemical and Thin-Film Strategies for New Transparent Conducting Oxides Freeman, A. J.; Poeppelmeier, K. R.; Mason, T. O. MRS Bulletin, Vol. 25, Issue 8 https://doi.org/10.1557/mrs2000.150	journal	August 2000
Interplay between Order and Disorder in the High Performance of Amorphous Transparent Conducting Oxides Walsh, Aron; Da Silva, Juarez L. F.; Wei, Su-Huai Chemistry of Materials, Vol. 21, Issue 21 https://doi.org/10.1021/cm9020113	journal	November 2009
The Coordination Number– an“Inorganic Chameleon” Hoppe, R. Angewandte Chemie International Edition in English, Vol. 9, Issue 1 https://doi.org/10.1002/anie.197000251	journal	January 1970

Similar Records

The Structure and Properties of Amorphous Indium Oxide

Journal Article · Tue Aug 25 00:00:00 EDT 2015 · Chem. Mater. · OSTI ID:1157593

Buchholz, D. Bruce; Ma, Qing; Alducin, Diego; +5 more

Electrical and band-gap properties of amorphous zinc–indium–tin oxide thin films

Journal Article · Wed Feb 01 00:00:00 EST 2012 · Progress in Natural Science · OSTI ID:1157593

Buchholz, D. B.; Proffit, D. E.; Wisser, M. D.; +2 more

Probing the Unique Role of Gallium in Amorphous Oxide Semiconductors through Structure–Property Relationships

Journal Article · Fri Sep 01 00:00:00 EDT 2017 · Advanced Electronic Materials · OSTI ID:1157593

Moffitt, Stephanie L.; Zhu, Qimin; Ma, Qing; +7 more

Title: The Structure and Properties of Amorphous Indium Oxide

Citation Formats

References (40)

Similar Records

Related Subjects