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Title: A UVLO Circuit in SiC Compatible with Power MOSFET Integration

The design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. The lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, was demonstrated to have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0 C and 200 C. Captured data shows the circuit to be functional over a temperature range from -55 C to 300 C. The design of the circuit and test results is presented.
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  1. APEI, Inc.
  2. University of Arkansas
  3. ORNL
Publication Date:
OSTI Identifier:
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: IEEE Journal of Emerging and Selected Topics in Power Electronics; Journal Volume: 2; Journal Issue: 3
Research Org:
Oak Ridge National Laboratory (ORNL)
Sponsoring Org:
ORNL work for others
Country of Publication:
United States
Silicon carbide (SiC); MOSFET circuits; power MOSFET; temperature