A UVLO Circuit in SiC Compatible With Power MOSFET Integration

Journal Article · Fri Mar 21 00:00:00 EDT 2014 · IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI:https://doi.org/10.1109/JESTPE.2014.2313119· OSTI ID:1150887

Glover, Michael D. ^[1]; Shepherd, Paul ^[1]; Francis, A. Matt ^[1]; Mudholkar, Mihir ^[1]; Mantooth, Homer Alan ^[1]; Ericson, Milton Nance ^[2]; Frank, S. Shane ^[2]; Britton, Charles L. ^[2]; Marlino, Laura D. ^[2]; McNutt, Ty R. ^[3]; Barkley, Adam ^[3]; Whitaker, Bret ^[3]; Lostetter, Alexander B. ^[3]

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1. Univ. of Arkansas, Fayetteville, AR (United States)
2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
3. Arkansas Power Electronics International Inc., Fayetteville, AR (United States)

Our design and test of the first undervoltage lock-out circuit implemented in a low voltage 4H silicon carbide process capable of single-chip integration with power MOSFETs is presented. We demonstrated the lock-out circuit, a block of the protection circuitry of a single-chip gate driver topology designed for use in a plug-in hybrid vehicle charger, in orderto have rise/fall times compatible with a MOSFET switching speed of 250 kHz while operating over the targeted operating temperature range between 0°C and 200°C. Captured data shows the circuit to be functional over a temperature range from -55°C to 300°C. This design of the circuit and test results is presented.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1150887
• Journal Information: IEEE Journal of Emerging and Selected Topics in Power Electronics, Vol. 2, Issue 3; ISSN 2168-6777
• Publisher: IEEE
• Country of Publication: United States
• Language: English

Related Subjects

24 POWER TRANSMISSION AND DISTRIBUTION
Silicon carbide (SiC)
MOSFET circuits
power MOSFET
temperature