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Title: The role of stoichiometric vacancy periodicity in pressure-induced amorphization of the Ga[subscript 2]SeTe[subscript 2] semiconductor alloy

Journal Article · · Appl. Phys. Lett.
DOI:https://doi.org/10.1063/1.4892549· OSTI ID:1150763

Research Organization:
Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source (APS)
Sponsoring Organization:
DOE-NNSA
OSTI ID:
1150763
Journal Information:
Appl. Phys. Lett., Vol. 105, Issue (5) ; 08, 2014
Country of Publication:
United States
Language:
ENGLISH

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