Room-temperature magnetoelectric multiferroic thin films and applications thereof
Patent
·
OSTI ID:1150080
The invention provides a novel class of room-temperature, single-phase, magnetoelectric multiferroic (PbFe.sub.0.67W.sub.0.33O.sub.3).sub.x (PbZr.sub.0.53Ti.sub.0.47O.sub.3).sub.1-x (0.2.ltoreq.x.ltoreq.0.8) (PFW.sub.x-PZT.sub.1-x) thin films that exhibit high dielectric constants, high polarization, weak saturation magnetization, broad dielectric temperature peak, high-frequency dispersion, low dielectric loss and low leakage current. These properties render them to be suitable candidates for room-temperature multiferroic devices. Methods of preparation are also provided.
- Research Organization:
- University of Puerto Rico, San Juan, PR
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- FG02-08ER46526
- Assignee:
- University of Puerto Rico (San Juan, PR)
- Patent Number(s):
- 8,803,264
- Application Number:
- 13/118,275
- OSTI ID:
- 1150080
- Country of Publication:
- United States
- Language:
- English
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