Amber light-emitting diode comprising a group III-nitride nanowire active region

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

Title: Amber light-emitting diode comprising a group III-nitride nanowire active region

Patent · Tue Jul 22 00:00:00 EDT 2014

OSTI ID:1149612

Wang, George T.; Li, Qiming; Wierer, Jr., Jonathan J.; Koleske, Daniel

A temperature stable (color and efficiency) III-nitride based amber (585 nm) light-emitting diode is based on a novel hybrid nanowire-planar structure. The arrays of GaN nanowires enable radial InGaN/GaN quantum well LED structures with high indium content and high material quality. The high efficiency and temperature stable direct yellow and red phosphor-free emitters enable high efficiency white LEDs based on the RGYB color-mixing approach.

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Research Organization:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC04-94AL85000

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Number(s):: 8,785,905

Application Number:: 13/743,438

OSTI ID:: 1149612

Resource Relation:: Patent File Date: 2013 Jan 17

Country of Publication:: United States

Language:: English

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Cited By (2)

Monolithic image chip for near-to-eye display Schubert, Martin F.; Thompson, Daniel Bryce; Grundmann, Michael Jason https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9620559 US Patent Document 9,620,559	patent	April 2017
Coalesced nanowire structures with interstitial voids and method for manufacturing the same Svensson, Patrik; Romano, Linda; Yi, Sungsoo https://doi.org/https://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/9570651 US Patent Document 9,570,651	patent	February 2017

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