Air stable n-doping of WSe2 by silicon nitride thin films with tunable fixed charge density

Chen, Kevin; Kiriya, Daisuke; Hettick, Mark; Tosun, Mahmut; Ha, Tae-Jun; Madhvapathy, Surabhi Rao; Desai, Sujay; Sachid, Angada; Javey, Ali

doi:10.1063/1.4891824

Title: Air stable n-doping of WSe₂ by silicon nitride thin films with tunable fixed charge density

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · APL Materials

DOI:https://doi.org/10.1063/1.4891824· OSTI ID:1149496

Chen, Kevin ^[1]; Kiriya, Daisuke ^[1]; Hettick, Mark ^[1]; Tosun, Mahmut ^[1]; Ha, Tae-Jun ^[1]; Madhvapathy, Surabhi Rao ^[1]; Desai, Sujay ^[1]; Sachid, Angada ^[1]; Javey, Ali ^[1]

Electrical Engineering and Computer Sciences Department, University of California, Berkeley, California 94720, USA and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA

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Sponsoring Organization:: USDOE

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1149496

Journal Information:: APL Materials, Journal Name: APL Materials Vol. 2 Journal Issue: 9; ISSN 2166-532X

Publisher:: American Institute of PhysicsCopyright Statement

Country of Publication:: United States

Language:: English

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