Sensitivity Analysis of a New Technique for Trapped Charge Extraction in SiC MOSFETs from Subthreshold Characteristics.
Conference
·
OSTI ID:1141234
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 1141234
- Report Number(s):
- SAND2014-2219C; 505423
- Resource Relation:
- Conference: Proposed for presentation at the IEEE International Reliability Physics Symposium held June 1-5, 2014 in Waikoloa, HI.
- Country of Publication:
- United States
- Language:
- English
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