SciTech Connect

Title: Surface recombination in semiconductors

Surface recombination in semiconductors We propose two general criteria for a surface defect state to act as an efficient, nonradiative recombination center. The first is that the thermal ionization energy should not deviate from the mid-gap energy by more than the relaxation energy of the defect, In this case the activation energy for the recombination is given by the barrier for the capture of the first carrier, whereas the second carrier is captured athermally. The second citerion is related to the position of the average dangling bond energy relative to the band edges. If, as in the cases of InP or InAs, it is located close to a band edge, a low surface recombination velocity is expected. However a much faster recombination is predicated and experimentally observed in the materials with the average dangling bond energy located close to the mid-gap. The relevance of these criteria for the novel wide-gap optoelectronic materials is discussed.
Authors: ;
Publication Date:
OSTI Identifier:114027
Report Number(s):LBL--37525; CONF-9507172--2
ON: DE96001112
DOE Contract Number:AC03-76SF00098
Resource Type:Conference
Data Type:
Resource Relation:Conference: 18. international conference on defects in semiconductors, Sendai (Japan), 23-28 Jul 1995; Other Information: PBD: Jul 1995
Research Org:Lawrence Berkeley Lab., CA (United States)
Sponsoring Org:USDOE, Washington, DC (United States)
Country of Publication:United States
Language:English
Subject: 36 MATERIALS SCIENCE; 42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES; SEMICONDUCTOR MATERIALS; SURFACE PROPERTIES; RECOMBINATION; CARRIER LIFETIME