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Title: Measurement of thermal conductivity in proton irradiated silicon

We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.
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Publication Date:
OSTI Identifier:
Report Number(s):
Journal ID: ISSN 0168-583X
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and; Journal Volume: 325
Research Org:
Idaho National Laboratory (INL)
Sponsoring Org:
Country of Publication:
United States
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY extended defects; proton irradiation; silicon; thermal conductivity; thermal wave microscopy