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Title: Measurement of thermal conductivity in proton irradiated silicon

Abstract

We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.

Authors:
; ; ;
Publication Date:
Research Org.:
Idaho National Lab. (INL), Idaho Falls, ID (United States)
Sponsoring Org.:
DOE - SC
OSTI Identifier:
1133884
Report Number(s):
INL/JOU-13-30405
Journal ID: ISSN 0168-583X
DOE Contract Number:  
DE-AC07-05ID14517
Resource Type:
Journal Article
Journal Name:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and
Additional Journal Information:
Journal Volume: 325; Journal ID: ISSN 0168-583X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; extended defects; proton irradiation; silicon; thermal conductivity; thermal wave microscopy

Citation Formats

Khafizov, Marat, Yablinsky, Clarissa, Allen, Todd, and Hurley, David. Measurement of thermal conductivity in proton irradiated silicon. United States: N. p., 2014. Web. doi:10.1016/j.nimb.2014.02.003.
Khafizov, Marat, Yablinsky, Clarissa, Allen, Todd, & Hurley, David. Measurement of thermal conductivity in proton irradiated silicon. United States. https://doi.org/10.1016/j.nimb.2014.02.003
Khafizov, Marat, Yablinsky, Clarissa, Allen, Todd, and Hurley, David. 2014. "Measurement of thermal conductivity in proton irradiated silicon". United States. https://doi.org/10.1016/j.nimb.2014.02.003.
@article{osti_1133884,
title = {Measurement of thermal conductivity in proton irradiated silicon},
author = {Khafizov, Marat and Yablinsky, Clarissa and Allen, Todd and Hurley, David},
abstractNote = {We investigate the influence of proton irradiation on thermal conductivity in single crystal silicon. We apply laser based modulated thermoreflectance technique to extract the change in conductivity of the thin layer damaged by proton irradiation. Unlike time domain thermoreflectance techniques that require application of a metal film, we perform our measurement on uncoated samples. This provides greater sensitivity to the change in conductivity of the thin damaged layer. Using sample temperature as a parameter provides a means to deduce the primary defect structures that limit thermal transport. We find that under high temperature irradiation the degradation of thermal conductivity is caused primarily by extended defects.},
doi = {10.1016/j.nimb.2014.02.003},
url = {https://www.osti.gov/biblio/1133884}, journal = {Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and},
issn = {0168-583X},
number = ,
volume = 325,
place = {United States},
year = {Tue Apr 01 00:00:00 EDT 2014},
month = {Tue Apr 01 00:00:00 EDT 2014}
}