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Title: Back-side readout semiconductor photomultiplier

Patent ·
OSTI ID:1132056
;

This disclosure provides systems, methods, and apparatus related to semiconductor photomultipliers. In one aspect, a device includes a p-type semiconductor substrate, the p-type semiconductor substrate having a first side and a second side, the first side of the p-type semiconductor substrate defining a recess, and the second side of the p-type semiconductor substrate being doped with n-type ions. A conductive material is disposed in the recess. A p-type epitaxial layer is disposed on the second side of the p-type semiconductor substrate. The p-type epitaxial layer includes a first region proximate the p-type semiconductor substrate, the first region being implanted with p-type ions at a higher doping level than the p-type epitaxial layer, and a second region disposed on the first region, the second region being doped with p-type ions at a higher doping level than the first region.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,729,654
Application Number:
13/652,238
OSTI ID:
1132056
Resource Relation:
Patent File Date: 2012 Oct 15
Country of Publication:
United States
Language:
English

References (17)

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Solid state photomultiplier with improved pulse shape readout patent November 2014

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