Kapitza resistance of Si/SiO2 interface

Journal Article · Sat Feb 01 00:00:00 EST 2014 · Journal of Applied Physics

OSTI ID:1129966

Deng, Bowen; Chenatynskiy, Aleksandr; Khafizov, Marat; Hurley, David; Phillpot, Simon

A phonon wave packet dynamics method is used to characterize the Kapitza resistance of a Si/SiO2 interface in a Si/SiO2/Si heterostructure. By varying the thickness of SiO2 layer sandwiched between two Si layers, we determine the Kapitza resistance for the Si/SiO2 interface from both wave packet dynamics and a direct, non-equilibrium molecular dynamics approach. The good agreement between the two methods indicates that they have each captured the anharmonic phonon scatterings at the interface. Moreover, detailed analysis provides insights as to how individual phonon mode scatters at the interface and their contribution to the Kapitza resistance.

• Research Organization: Idaho National Lab. (INL), Idaho Falls, ID (United States)
• Sponsoring Organization: DOE - SC
• DOE Contract Number: DE-AC07-05ID14517
• OSTI ID: 1129966
• Report Number(s): INL/JOU-14-31168
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 8
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
Kapitza resistance
molecular dynamics simulation
phonon dynamics
thermal transport