Insulating ferromagnetic oxide films: the controlling role of oxygen vacancy ordering
Journal Article
·
· Physical Review Letters
OSTI ID:1128995
- ORNL
- Universidad Complutense de Madrid, Spain
- University of California, Berkeley
- Stanford University
- University of Tennessee, Knoxville (UTK)
- Vanderbilt University, Nashville
The origin of ferromagnetism in strained epitaxial LaCoO3 films has been a long-standing mystery. Here, we combine atomically resolved Z-contrast imaging, electron-energy-loss spectroscopy, and density-functional calculations to demonstrate that, in epitaxial LaCoO3 films, oxygen-vacancy superstructures release strain, control the film s electronic properties, and produce the observed ferromagnetism via the excess electrons in the Co d states. Although oxygen vacancies typically dope a material n-type, we find that ordered vacancies induce Peierls-like minigaps which, combined with strain relaxation, trigger a nonlinear rupture of the energy bands, resulting in insulating behavior.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1128995
- Journal Information:
- Physical Review Letters, Vol. 112
- Country of Publication:
- United States
- Language:
- English
Similar Records
Long Range Ferromagnetic Order in LaCoO3-δ epitaxial films due to the interplay of epitaxial strain and oxygen vacancy ordering
Strain-induced majority carrier inversion in ferromagnetic epitaxial thin films
Role of oxygen vacancies in tuning magnetic properties of Co-doped SnO{sub 2} insulating films
Journal Article
·
Thu Apr 23 00:00:00 EDT 2015
· Physical Review. B, Condensed Matter and Materials Physics
·
OSTI ID:1128995
+2 more
Strain-induced majority carrier inversion in ferromagnetic epitaxial thin films
Journal Article
·
Wed Mar 04 00:00:00 EST 2020
· Physical Review Materials
·
OSTI ID:1128995
+10 more
Role of oxygen vacancies in tuning magnetic properties of Co-doped SnO{sub 2} insulating films
Journal Article
·
Fri Jun 15 00:00:00 EDT 2007
· Journal of Applied Physics
·
OSTI ID:1128995