Analysis of Channel Confined Growth for Single-Crystalline GaN Layers on SiO2.
Journal Article
·
· Crystal Growth&Design
OSTI ID:1124236
Abstract not provided.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- DE-AC04-94AL85000
- OSTI ID:
- 1124236
- Report Number(s):
- SAND2013-10757J; 492888
- Journal Information:
- Crystal Growth&Design, Related Information: Proposed for publication in Crystal Growth&Design.
- Country of Publication:
- United States
- Language:
- English
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