Temperature-dependent void formation and growth at ion-irradiated nanocrystalline CeO2 Si interfaces

Journal Article · Wed Jan 01 00:00:00 EST 2014 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2014.02.012· OSTI ID:1122707

Perez-Bergquist, Alex G ^[1]; Zhang, Yanwen ^[1]; Varga, Tamas ^[2]; Moll, Sandra ^[3]; Namavar, Fereydoon ^[4]; Weber, William J ^[1]

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1. ORNL
2. Pacific Northwest National Laboratory (PNNL)
3. TN International / AREVA, 1, rue des Hérons, 78182 Montigny Le Bretonneux, France
4. University of Nebraska Medical Center

Ceria is a thermally stable ceramic that has numerous applications in the nuclear industry, including use in nuclear fuels and waste forms. Recently, interest has surged in nanostructured ceria due to its increased mechanical properties and electronic conductivity in comparison with bulk ceria and its ability to self-heal in response to energetic ion bombardment. Here, nanocrystalline ceria thin films grown over a silicon substrate are irradiated to fluences of up to 4 1016 ions/cm2 under different irradiation conditions: with differing ion species (Si+ and Ni+), different ion energies (1.0 1.5 MeV), and at varying temperatures (160 600 K). While the nanocrystalline ceria is found to exhibit exceptional radiation resistance under all tested conditions, severe ion irradiation-induced mixing, void formation, and void growth are observed at the ceria/silicon interface, with the degree of damage proving to be temperature dependent.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE; Work for Others (WFO)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1122707
• Journal Information: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 325; ISSN 0168-583X
• Country of Publication: United States
• Language: English