THE INFLUENCE OF NEUTRON-IRRADIATION AT LOW TEMPERATURES ON THE DIELECTRIC PARAMETERS OF 3C-SiC
Journal Article
·
· Physica B: Condensed Matter
3C-SiC wafers were irradiated with neutrons of various fluences and at low (200 - 400 ?C) irradiation temperatures. Fourier Transform infrared (FTIR) reflectance spectra were obtained for the samples, and the spectra used to extract the dielectric parameters for each specimen, using statistical curve-fitting procedures. Analysis of all data revealed trends in reflectance peak heights as well as in the dielectric parameters. The surface roughness of the irradiated samples was measured by atomic force spectroscopy (AFM) and certain trends could be ascribed to surface roughness.
- Research Organization:
- Idaho National Lab. (INL), Idaho Falls, ID (United States)
- Sponsoring Organization:
- DOE - NE
- DOE Contract Number:
- DE-AC07-05ID14517
- OSTI ID:
- 1122110
- Report Number(s):
- INL/JOU-13-29473
- Journal Information:
- Physica B: Condensed Matter, Vol. 439; ISSN 0921-4526
- Country of Publication:
- United States
- Language:
- English
Similar Records
IMPACT OF DIELECTRIC PARAMETERS ON THE REFLECTIVITY OF 3C-SiC WAFERS WITH A ROUGH SURFACE MORPHOLOGY IN THE RESTSTRAHLEN REGION
Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
Impact of Morphological Features on the Dielectric Breakdown at SiO{sub 2}/3C-SiC Interfaces
Journal Article
·
Tue Apr 01 00:00:00 EDT 2014
· Physica B: Condensed Matter
·
OSTI ID:1122110
+1 more
Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD
Journal Article
·
Fri Apr 15 00:00:00 EDT 2016
· Materials Research Bulletin
·
OSTI ID:1122110
+9 more
Impact of Morphological Features on the Dielectric Breakdown at SiO{sub 2}/3C-SiC Interfaces
Journal Article
·
Mon Nov 01 00:00:00 EDT 2010
· AIP Conference Proceedings
·
OSTI ID:1122110
+5 more