skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Heavily strained BaZr0.8Y0.2O3-x interfaces with enhanced transport properties

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4867020· OSTI ID:1121824

Research Organization:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
DOE Contract Number:
DE-AC05-00OR22725
OSTI ID:
1121824
Journal Information:
Applied Physics Letters, Vol. 104, Issue 8; ISSN 0003--6951
Country of Publication:
United States
Language:
English

Similar Records

Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures
Journal Article · Tue Jan 28 00:00:00 EST 2014 · Journal of Applied Physics · OSTI ID:1121824

Transport and optical properties of heavily hole doped semiconductors BaCu2Se2 and BaCu2Te2
Journal Article · Sat Jan 01 00:00:00 EST 2011 · Journal of Solid State Chemistry · OSTI ID:1121824

Defect- and strain-enhanced cavity formation and Au precipitation at nano-crystalline ZrO2/SiO2/Si interfaces
Journal Article · Sat Jan 01 00:00:00 EST 2011 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms · OSTI ID:1121824

Related Subjects