Characterization Of Superconducting Samples With SIC System For Thin Film Developments: Status And Recent Results

Conference · Sat Feb 01 00:00:00 EST 2014

OSTI ID:1121257

Phillips, H. Lawrence ^[1]; Reece, Charles E. ^[1]; Valente-Feliciano, Anne-Marie ^[1]; Xiao, Binping ^[2]; Eremeev, Grigory V. ^[1]

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1. Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)
2. Brookhaven National Lab, Upton, NY (United States)

Within any thin film development program directed towards SRF accelerating structures, there is a need for an RF characterization device that can provide information about RF properties of small samples. The current installation of the RF characterization device at Jefferson Lab is Surface Impedance Characterization (SIC) system. The data acquisition environment for the system has recently been improved to allow for automated measurement, and the system has been routinely used for characterization of bulk Nb, films of Nb on Cu, MgB{sub 2}, NbTiN, Nb{sub 3}Sn films, etc. We present some of the recent results that illustrate present capabilities and limitations of the system.

• Research Organization: Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-06OR23177
• OSTI ID: 1121257
• Report Number(s): JLAB-ACC-13-1706; DOE/OR/23177-2829; TUP070; TRN: US1400252
• Resource Relation: Conference: SRF 2013 (RF Superconductivity), Paris (France), 23-27 Sep 2013
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
43 PARTICLE ACCELERATORS