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Title: Mechanical control of electroresistive switching

Abstract

Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for non-volatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should allow control by mechanical stimuli, the behavior we refer to as piezochemical effect. We verify this effect experimentally, and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current based read-out.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. ORNL
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1115346
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Nano Letters
Additional Journal Information:
Journal Volume: 13; Journal Issue: 9; Journal ID: ISSN 1530--6984
Country of Publication:
United States
Language:
English

Citation Formats

Kim, Yunseok, Kelly, Simon J, Strelcov, Evgheni, Jesse, Stephen, Biegalski, Michael D, Balke, Nina, Maksymovych, Petro, and Kalinin, Sergei V. Mechanical control of electroresistive switching. United States: N. p., 2013. Web. doi:10.1021/nl401411r.
Kim, Yunseok, Kelly, Simon J, Strelcov, Evgheni, Jesse, Stephen, Biegalski, Michael D, Balke, Nina, Maksymovych, Petro, & Kalinin, Sergei V. Mechanical control of electroresistive switching. United States. https://doi.org/10.1021/nl401411r
Kim, Yunseok, Kelly, Simon J, Strelcov, Evgheni, Jesse, Stephen, Biegalski, Michael D, Balke, Nina, Maksymovych, Petro, and Kalinin, Sergei V. 2013. "Mechanical control of electroresistive switching". United States. https://doi.org/10.1021/nl401411r.
@article{osti_1115346,
title = {Mechanical control of electroresistive switching},
author = {Kim, Yunseok and Kelly, Simon J and Strelcov, Evgheni and Jesse, Stephen and Biegalski, Michael D and Balke, Nina and Maksymovych, Petro and Kalinin, Sergei V},
abstractNote = {Hysteretic metal-insulator transitions (MIT) mediated by ionic dynamics or ferroic phase transitions underpin emergent applications for non-volatile memories and logic devices. The vast majority of applications and studies have explored the MIT coupled to the electric field or temperarture. Here, we argue that MIT coupled to ionic dynamics should allow control by mechanical stimuli, the behavior we refer to as piezochemical effect. We verify this effect experimentally, and demonstrate that it allows both studying materials physics and enabling novel data storage technologies with mechanical writing and current based read-out.},
doi = {10.1021/nl401411r},
url = {https://www.osti.gov/biblio/1115346}, journal = {Nano Letters},
issn = {1530--6984},
number = 9,
volume = 13,
place = {United States},
year = {Tue Jan 01 00:00:00 EST 2013},
month = {Tue Jan 01 00:00:00 EST 2013}
}