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Title: Mapping Electrostatic Profiles Across Axial p-n Junctions in Si Nanowires using Off-Axis Electron Holography

Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0±0.3V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019cm-3 for donors and 1017cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures.
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Publication Date:
OSTI Identifier:
Report Number(s):
47607; KP1704020
DOE Contract Number:
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters, 103(15):Article No. 153108
Research Org:
Pacific Northwest National Laboratory (PNNL), Richland, WA (US), Environmental Molecular Sciences Laboratory (EMSL)
Sponsoring Org:
Country of Publication:
United States
Environmental Molecular Sciences Laboratory