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Title: Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.
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Publication Date:
OSTI Identifier:
Report Number(s):
DOE Contract Number:
FC36-05G015073; AC05-000R22725
Resource Type:
Research Org:
William Marsh Rice University, Houston, TX, USA
Sponsoring Org:
Country of Publication:
United States