TIN-BASED GROUP IV SEMICONDUCTORS: New Platforms for Opto- and Microelectronics on Silicon
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August 2006 |
Electron–phonon interaction in tetrahedral semiconductors
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January 2005 |
Measurement of Elastic Constants at Low Temperatures by Means of Ultrasonic Waves–Data for Silicon and Germanium Single Crystals, and for Fused Silica
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August 1953 |
Violation of Vegard's law in covalent semiconductor alloys
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December 1976 |
Length mismatch in random semiconductor alloys. III. Crystalline and amorphous SiGe
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December 1992 |
Defect interactions in Sn1−xGex random alloys
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June 2009 |
Lattice Parameter and Density in Germanium-Silicon Alloys 1
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October 1964 |
Structure and thermodynamics of alloys from ab initio Monte Carlo simulations
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April 1991 |
Algorithms for the rapid simulation of Rutherford backscattering spectra
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June 1985 |
Ab initio determination of the atomistic structure of alloy
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October 2001 |
Vacancy-mediated dopant diffusion activation enthalpies for germanium
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April 2008 |
Norm-conserving and ultrasoft pseudopotentials for first-row and transition elements
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October 1994 |
First-shell bond lengths in crystalline alloys
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May 1999 |
Ge–Sn semiconductors for band-gap and lattice engineering
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October 2002 |
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
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October 1996 |
Conservation of bond lengths in strained Ge-Si layers
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January 1991 |
Test of Vegard's law in thin epitaxial SiGe layers
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December 1995 |
Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕GeSn∕Si(100) heteroepitaxial structures
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December 2006 |
Thermal Expansion of Grey Tin
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November 1954 |
Die Konstitution der Mischkristalle und die Raumf�llung der Atome
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January 1921 |
Nonlinear stability of centers in : Electronic structure calculations
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November 2008 |
Electronic structure of SnxGe1−x alloys for small Sn compositions: Unusual structural and electronic properties
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March 2010 |
Lattice location study of ion implanted Sn and Sn-related defects in Ge
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April 2010 |
Chemical routes to Ge∕Si(100) structures for low temperature Si-based semiconductor applications
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February 2007 |
Electronic structure of ZnS, ZnSe, ZnTe, and their pseudobinary alloys
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August 1987 |
Bond-length relaxation in alloys
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November 1994 |
Ground State of the Electron Gas by a Stochastic Method
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August 1980 |
Length mismatch in random semiconductor alloys. I. General theory for quaternaries
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December 1992 |
Ab initio calculation of the structure of the random alloys
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November 1997 |
Unusual structural and electronic properties of SnxGe1−x alloys
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November 2003 |
Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L -band telecommunications
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February 2004 |
Sn-alloying as a means of increasing the optical absorption of Ge at the C - and L -telecommunication bands
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October 2009 |
Experimental and Theoretical Study of Deviations from Vegard's Law in the Sn x Ge 1 - x System
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July 2003 |
Nonsubstitutional single-atom defects in the alloy
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April 2009 |
Optical critical points of thin-film alloys: A comparative study
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March 2006 |
Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
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November 2010 |