The Effect of Subbandgap Illumination on the Bulk Resistivity of CdZnTe

Journal Article · Sat Aug 24 00:00:00 EDT 2013 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-013-2676-y· OSTI ID:1097608

Wright, Jonathan S.; Washington II, Aaron L.; Duff, Martine C.; Burger, Arnold; Groza, Michael; Matei, Liviu; Buliga, Vladimir

The variation in bulk resistivity during infrared (IR) illumination above 950 nm of state-of-the-art CdZnTe (CZT) crystals grown using the traveling heating method or the modified Bridgman method is documented. The change in steady-state current with and without illumination is also evaluated. The influence of secondary phases (SP) on current-voltage (I-V) characteristics is discussed using IR transmission microscopy to determine the defect concentration within the crystal bulk. SP present within the CZT are connected to the existence of deep, IR-excitable traps within the bandgap.

• Research Organization: Savannah River Site (SRS), Aiken, SC (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: DE-AC09-08SR22470
• OSTI ID: 1097608
• Report Number(s): SRNL-STI-2013-00475
• Journal Information: Journal of Electronic Materials, Vol. 42, Issue 11; ISSN 0361-5235
• Publisher: Springer
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE