Ion distribution and electronic stopping power for Au ions in silicon carbide

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

DOI:https://doi.org/10.1016/j.nimb.2013.02.051· OSTI ID:1095735

Jin, Ke ^[1]; Zhang, Yanwen ^[2]; Xue, Haizhou ^[1]; Zhu, Zihua ^[3]; Weber, William J ^[2]

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1. University of Tennessee, Knoxville (UTK)
2. ORNL
3. Pacific Northwest National Laboratory (PNNL)

Accurate knowledge of ion distribution and electronic stopping power for heavy ions in light targets is highly desired due to the large errors in prediction by the widely used Stopping and Range of Ions in Matter (SRIM) code. In this study, Rutherford backscattering spectrometry (RBS) and secondary ion mass spectrometry (SIMS) are used as complementary techniques to determine the distribution of Au ions in SiC with energies from 700 keV to 15 MeV. In addition, a single ion technique with an improved data analysis procedure is applied to measure the electronic stopping power for Au ions in SiC with energies up to 70 keV/nucleon. Large overestimation of the electronic stopping power is found by SRIM prediction in the low energy regime up to 50 keV/nucleon. The stopping power data and the ion ranges are crosschecked with each other and a good agreement is achieved.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE; Work for Others (WFO)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1095735
• Journal Information: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 307; ISSN 0168-583X
• Country of Publication: United States
• Language: English