Bi-Se doped with Cu, p-type semiconductor
Patent
·
OSTI ID:1093242
A Bi--Se doped with Cu, p-type semiconductor, preferably used as an absorber material in a photovoltaic device. Preferably the semiconductor has at least 20 molar percent Cu. In a preferred embodiment, the semiconductor comprises at least 28 molar percent of Cu. In one embodiment, the semiconductor comprises a molar percentage of Cu and Bi whereby the molar percentage of Cu divided by the molar percentage of Bi is greater than 1.2. In a preferred embodiment, the semiconductor is manufactured as a thin film having a thickness less than 600 nm.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC36-98GO10337
- Assignee:
- U.S. Department of Energy (Washington, DC)
- Patent Number(s):
- 8,513,050
- Application Number:
- 12/815,585
- OSTI ID:
- 1093242
- Resource Relation:
- Patent File Date: 2010 Jun 15
- Country of Publication:
- United States
- Language:
- English
The Cu-Bi-Se phase system at temperatures between 300 and 750C [
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journal | December 2003 |
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