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Title: Lithographic dry development using optical absorption

Patent ·
OSTI ID:1092754
; ;

A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Research Organization:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-05CH11231
Assignee:
The Regents of the University of California (Oakland, CA)
Patent Number(s):
8,512,937
Application Number:
13/039,139
OSTI ID:
1092754
Country of Publication:
United States
Language:
English

References (8)

Sub-20 nm laser ablation for lithographic dry development journal April 2012
A two-dimensional model of the deformation of photoresist structures using elastoplastic polymer properties journal August 2004
Site-Selective Doping of Dyes into Polystyrene- block -Poly(4-vinyl pyridine) Diblock Copolymer Films and Selective Laser Ablation of the Dye-Doped Films journal November 2007
Extreme ultraviolet lithography: A review journal January 2007
Selective electroless plating patent August 1987
Enhancement of ultraviolet laser ablation and etching organic solids patent May 1990
Negative Tone Dry Development of Si-Containing Resists by Laser Ablation journal December 1995
Integrated Silylation and Dry Development of Resist for sub-0.15.MU.m Top Surface Imaging Applications. journal January 1998

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