Photoluminescence in Chemical Vapor Deposited ZnS: insight into electronic defects
Journal Article
·
· Optical Materials Express, 3(9):1273-1278
Photoluminescence spectra taken from chemical vapor deposited (CVD) ZnS are shown to exhibit sub-band-gap emission bands characteristic of isoelectronic oxygen defects. The emission spectra vary spatially with position and orientation with respect to the major axis of CVD growth. These data suggest that a complex set of defects exist in the band gap of CVD ZnS whose structural nature is highly dependent upon local deposition and growth conditions, contributing to inherent heterogeneity in optical behavior throughout the material.
- Research Organization:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC05-76RL01830
- OSTI ID:
- 1091463
- Report Number(s):
- PNNL-SA-95857
- Journal Information:
- Optical Materials Express, 3(9):1273-1278, Journal Name: Optical Materials Express, 3(9):1273-1278
- Country of Publication:
- United States
- Language:
- English
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