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Title: Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1091263
Report Number(s):
SLAC-REPRINT-2013-456
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Nature 480:504,2011
Additional Journal Information:
Journal Name: Nature 480:504,2011
Country of Publication:
United States
Language:
English
Subject:
MATSCI

Citation Formats

Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., and Bao, Z. Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain. United States: N. p., 2013. Web.
Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., & Bao, Z. Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain. United States.
Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., and Bao, Z. 2013. "Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain". United States.
@article{osti_1091263,
title = {Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain},
author = {Giri, G. and Verploegen, E. and Mannsfeld, S. C.B. and Atahan-Evrenk, S. and Kim, D. H. and Lee, S. Y. and Becerrill, H. A. and Aspuru-Guzik, A. and Toney, M. F. and Bao, Z.},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/1091263}, journal = {Nature 480:504,2011},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 22 00:00:00 EDT 2013},
month = {Thu Aug 22 00:00:00 EDT 2013}
}