Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain
- Authors:
- Publication Date:
- Research Org.:
- SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1091263
- Report Number(s):
- SLAC-REPRINT-2013-456
- DOE Contract Number:
- AC02-76SF00515
- Resource Type:
- Journal Article
- Journal Name:
- Nature 480:504,2011
- Additional Journal Information:
- Journal Name: Nature 480:504,2011
- Country of Publication:
- United States
- Language:
- English
- Subject:
- MATSCI
Citation Formats
Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., and Bao, Z. Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain. United States: N. p., 2013.
Web.
Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., & Bao, Z. Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain. United States.
Giri, G., Verploegen, E., Mannsfeld, S. C.B., Atahan-Evrenk, S., Kim, D. H., Lee, S. Y., Becerrill, H. A., Aspuru-Guzik, A., Toney, M. F., and Bao, Z. 2013.
"Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain". United States.
@article{osti_1091263,
title = {Tuning Charge Transport in Solution-Sheared Organic Semiconductors Using Lattice Strain},
author = {Giri, G. and Verploegen, E. and Mannsfeld, S. C.B. and Atahan-Evrenk, S. and Kim, D. H. and Lee, S. Y. and Becerrill, H. A. and Aspuru-Guzik, A. and Toney, M. F. and Bao, Z.},
abstractNote = {},
doi = {},
url = {https://www.osti.gov/biblio/1091263},
journal = {Nature 480:504,2011},
number = ,
volume = ,
place = {United States},
year = {Thu Aug 22 00:00:00 EDT 2013},
month = {Thu Aug 22 00:00:00 EDT 2013}
}
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