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Title: Organic thin film devices with stabilized threshold voltage and mobility, and method for preparing the devices

Patent ·
OSTI ID:1084216

Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (.mu.) and threshold voltage (VT), a decrease in contact resistance R.sub.C, and an extended operational lifetime that did not degrade after 2000 hours of operation in the air.

Research Organization:
Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC52-06NA25396
Assignee:
Los Alamos National Security, LLC (Los Alamos, NM)
Patent Number(s):
8,461,573
Application Number:
12/775,056
OSTI ID:
1084216
Country of Publication:
United States
Language:
English

References (26)

Gap states in organic semiconductors:  Hydrogen- and oxygen-induced states in pentacene journal July 2003
Reliability and degradation of organic light emitting devices journal December 1994
Photocurrent studies of stress and aging in pentacene thin film transistors journal November 2006
Organic double-gate field-effect transistors: Logic-AND operation journal December 2005
Triple-layer passivation for longevity of polymer light-emitting diodes journal December 2001
The effect of oxygen exposure on pentacene electronic structure journal June 2005
Photocurrent studies of sexythiophene-based OFETs journal April 2009
Photocurrent probe of field-dependent mobility in organic thin-film transistors journal November 2005
Extended Lifetime of Organic Field-Effect Transistors Encapsulated with Titanium Sub-Oxide as an ‘Active’ Passivation/Barrier Layer journal May 2009
H2O effect on the stability of organic thin-film field-effect transistors journal August 2003
Pentacene thin film transistors on inorganic dielectrics: Morphology, structural properties, and electronic transport journal January 2003
Air-Stable Polymer Electronic Devices journal September 2007
Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors journal July 2005
Photocurrent of hydrogenated nanocrystalline silicon thin film/crystalline silicon heterostructure journal December 2007
Photoinduced doping effect of pentacene field effect transistor in oxygen atmosphere studied by displacement current measurement journal June 2005
Thin film encapsulated flexible organic electroluminescent displays journal July 2003
Amorphouslike Density of Gap States in Single-Crystal Pentacene journal August 2004
Reversible and irreversible trapping at room temperature in poly(thiophene) thin-film transistors journal June 2005
Photoconductivity of Hf-based binary metal oxide systems journal December 2008
Electric-Field-Induced Gap States in Pentacene journal June 2009
Organic light-emitting devices with extended operating lifetimes on plastic substrates journal October 2002
Identification of polymorphs of pentacene journal July 2003
Characterization of pentacene organic thin film transistors fabricated on SiNx films by non-photolithographic processes journal December 2002
Influence of Electric Field on Microstructures of Pentacene Thin-Films in Field-Effect Transistors journal January 2008
Bias-induced threshold voltages shifts in thin-film organic transistors journal April 2004
Efficiency of optical second harmonic generation from pentacene films of different morphology and structure journal March 1998

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