The disintegration of GaSb/GaAs nanostructures upon capping

Journal Article · Tue Jan 01 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4796036· OSTI ID:1081301

Martin, Andrew J. ^[1]; Hwang, Jinyoung ^[1]; Marquis, Emmanuelle A. ^[1]; Smakman, Erwin ^[2]; Saucer, Timothy W. ^[1]; Rodriguez, Garrett V. ^[1]; Hunter, Allen H. ^[1]; Sih, Vanessa ^[1]; Koenraad, Paul M. ^[2]; Phillips, Jamie D. ^[1]; Millunchick, Joanna ^[1]

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1. Univ. of Michigan, Ann Arbor, MI (United States)
2. Eindhoven Univ. of Technology (Netherlands)

Atom probe tomography and cross-sectional scanning tunneling microscopy show that GaSb/GaAs quantum dots disintegrate into ring-like clusters of islands upon capping. Band transition energies calculated using an 8-band k.p model of the capped dots with the observed dimensions are consistent with emission energies observed in photoluminescence data. These results emphasize the need for full three-dimensional characterization to develop an accurate understanding of the structure, and thus the optical properties, of buried quantum dots.

• Research Organization: Energy Frontier Research Centers (EFRC) (United States). Center for Solar and Thermal Energy Conversion (CSTEC)
• Sponsoring Organization: USDOE
• DOE Contract Number: SC0000957
• OSTI ID: 1081301
• Journal Information: Applied Physics Letters, Vol. 103, Issue 11; Related Information: CSTEC partners with University of Michigan (lead); Kent State University; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

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solar (thermal)
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thermal conductivity
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optics
synthesis (novel materials)
synthesis (self-assembly)