SPIN-TORQUE IN SYSTEMS WITH INHOMOGENEOUS MAGETIZATION
- Georgia Institute of Technology
The work performed during the grant period focused on the phenomenon of spin-transfer torque. This is a quantum mechanical effect whereby the angular momentum of conduction electrons is transferred to the magnetization of ferromagnetic structures. Our work on this subject began with phenomenological drift-diffusion and Landau-Lifshitz-Gilbert equations to demonstrate unambiguously that unpolarized current flow from a nonmagnet into a ferromagnet can produce a precession-type instability of the magnetization. We then used Boltzmann calculations appropriate to spin-valve type magnetic heterostructures composed of a non-magnetic thin film sandwiched between two thin film layers with uniform magnetization. Perhaps our most important paper dealt with quantum and semi-classical calculations of spin-transfer torque in systems with domain walls and other inhomogeneous distributions of magnetization. The latter work caused us to suggest that the Landau-Lifshitz approach to magnetic damping provided a clearer picture of the physics than the more popular (but formally equivalent) Gilbert approach to damping. Finally, we returned to our Boltzmann calculations and made a serious effort to analyze experimental data on current-induced magnetization in switching in magnetic spin-valve structures. Our work was part of a world-wide effort to study and harness the transport of the electron's spin and was one of the first sustained theoretical efforts in this direction in the United States. The payoff is just now being seen. In November of 2012, the Everspin Corporation announced the release of the first commercial spin-torque magnetoresistive random access memory.
- Research Organization:
- Georgia Institute of Technology, Atlanta, GA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- FG02-04ER46170
- OSTI ID:
- 1074448
- Report Number(s):
- DOE-Georgia Institute of Technology-46170
- Country of Publication:
- United States
- Language:
- English
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