Thick film hydrogen sensor
Patent
·
OSTI ID:106700
A thick film hydrogen sensor element includes an essentially inert, electrically-insulating substrate having deposited thereon a thick film metallization forming at least two resistors. The metallization is a sintered composition of Pd and a sinterable binder such as glass frit. An essentially inert, electrically insulating, hydrogen impermeable passivation layer covers at least one of the resistors. 8 figs.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- Assignee:
- Martin Marietta Energy Systems, Inc., Oak Ridge, TN (United States)
- Patent Number(s):
- US 5,451,920/A/
- Application Number:
- PAN: 8-170,628
- OSTI ID:
- 106700
- Resource Relation:
- Other Information: PBD: 19 Sep 1995
- Country of Publication:
- United States
- Language:
- English
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