Characterization of Solar Cell Substrates Using Diode Array Technique
In current manufacturing regimes, silicon solar cells are made from low-cost silicon wafers, which are produced in one of three ways: low-grade, Czochralski-type single-crystal wafers; multicrystalline silicon wafers grown by casting; or shaped ribbons produced by directional solidification. These materials contain high concentrations of impurities and defects, which lead to spatial variations in the material properties. A detailed characterization of the substrates is needed to understand the nature of defects and impurities and their influence on solar cell performance. Although many techniques can be applied to map material properties, the influence of the various materials on cell performance is difficult to determine. We have developed a technique to fabricate arrays of edge-passivated diodes (small-area solar cells), which can be probed using an automatic prober to generate dark and illuminated I-V characteristics of each device. These devices can be readily used for other measurements, such as measurement of minority-carrier diffusion length, light or electron beam induced current, C-V analyses, and DLTS. The data from diode arrays are used to study influence of defects and impurities on cell performance and to predict the highest large-area cell performance.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1063652
- Resource Relation:
- Conference: Linking Science and Technology for Global Solutions: Technical Program of the Minerals, Metals & Materials Society (TMS) 136th Annual Meeting and Exhibition, 25 February-1 March 2007, Orlando, Florida
- Country of Publication:
- United States
- Language:
- English
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