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Title: Recent pollution prevention research in III-V device manufacturing at Hewlett-Packard

Book ·
OSTI ID:106195
 [1]
  1. Hewlett-Packard Co., San Jose, CA (United States). Optoelectronics Div.

Several coordinated hazardous waste minimization projects have been undertaken at the facilities involved in III-V device manufacturing. These include modifications to existing processes to reduce or eliminate emissions of CFCs, 1,1,1-TCA, xylenes, ethylene glycol ethers, 1,2,4-trichlorobenzene (in photoresist stripper), and other compounds. These issues are addressed in turn, noting the unique aspects of GaAs and GaP device manufacture that need to be taken into account. Goals achieved have been complete cessation of CFC and 1,1,1-TCA use and 33% reductions in xylene and 1,2,4-trichlorobenzene usage since 1990, despite significant increases in total production volume during the same time period. Specific strategies are also described for tracking chemical use and sharing best practices for hazardous waste reduction across functional groups.

OSTI ID:
106195
Report Number(s):
CONF-940411-; ISBN 1-55899-239-1; TRN: IM9542%%283
Resource Relation:
Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 4-8 Apr 1994; Other Information: PBD: 1994; Related Information: Is Part Of Materials and processes for environmental protection; Voss, K.E.; Quick, L.M. [eds.] [Englehard Corp., Iselin, NJ (United States)]; Gadgil, P.N. [ed.] [Queens Univ., Kingston, Ontario (Canada)]; Adkins, C.L.J. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; PB: 356 p.; Materials Research Society symposium proceedings, Volume 344
Country of Publication:
United States
Language:
English