Recent pollution prevention research in III-V device manufacturing at Hewlett-Packard
- Hewlett-Packard Co., San Jose, CA (United States). Optoelectronics Div.
Several coordinated hazardous waste minimization projects have been undertaken at the facilities involved in III-V device manufacturing. These include modifications to existing processes to reduce or eliminate emissions of CFCs, 1,1,1-TCA, xylenes, ethylene glycol ethers, 1,2,4-trichlorobenzene (in photoresist stripper), and other compounds. These issues are addressed in turn, noting the unique aspects of GaAs and GaP device manufacture that need to be taken into account. Goals achieved have been complete cessation of CFC and 1,1,1-TCA use and 33% reductions in xylene and 1,2,4-trichlorobenzene usage since 1990, despite significant increases in total production volume during the same time period. Specific strategies are also described for tracking chemical use and sharing best practices for hazardous waste reduction across functional groups.
- OSTI ID:
- 106195
- Report Number(s):
- CONF-940411-; ISBN 1-55899-239-1; TRN: IM9542%%283
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society (MRS), San Francisco, CA (United States), 4-8 Apr 1994; Other Information: PBD: 1994; Related Information: Is Part Of Materials and processes for environmental protection; Voss, K.E.; Quick, L.M. [eds.] [Englehard Corp., Iselin, NJ (United States)]; Gadgil, P.N. [ed.] [Queens Univ., Kingston, Ontario (Canada)]; Adkins, C.L.J. [ed.] [Sandia National Labs., Albuquerque, NM (United States)]; PB: 356 p.; Materials Research Society symposium proceedings, Volume 344
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
54 ENVIRONMENTAL SCIENCES
SEMICONDUCTOR DEVICES
MANUFACTURING
HAZARDOUS MATERIALS
MINIMIZATION
MATERIAL SUBSTITUTION
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
CHLOROFLUOROCARBONS
CHLORINATED ALIPHATIC HYDROCARBONS
CHLORINATED AROMATIC HYDROCARBONS
CHEMICAL FEEDSTOCKS
REAGENTS
DEMAND FACTORS
COMPILED DATA