Thin Metal Oxide Films to Modify a Window Layer in CdTe-Based Solar Cells for Improved Performance

Journal Article · Fri May 25 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4722921· OSTI ID:1054446

Lemmon, John P. ^[1]; Polikarpov, Evgueni ^[1]; Bennett, Wendy D. ^[1]; Kovarik, Libor ^[1]

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1. Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

We report on CdS/CdTe photovoltaic devices that contain a thin Ta₂O₅ film deposited onto the CdS window layer by sputtering. We show that for thicknesses below 5 nm, Ta₂O₅ films between CdS and CdTe positively affect the solar cell performance, improving JSC, VOC, and the cell power conversion efficiency despite the insulating nature of the interlayer material. Using the Ta₂O₅ interlayer, a VOC gain of over 100 mV was demonstrated compared to a CdTe/CdS baseline. Application of a 1nm Ta₂O₅ interlayer enabled the fabrication of CdTe solar cells with extremely thin (less than 30 nm) CdS window layers. The efficiency of these cells exceeded that of a base line cell with 95 nm of CdS.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1054446
• Report Number(s): PNNL-SA-86428; 43997; EB2102010
• Journal Information: Applied Physics Letters, Vol. 100, Issue 21; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

Environmental Molecular Sciences Laboratory