Stable highly conductive ZnO via reduction of Zn vacancies

Journal Article · Sun Jan 01 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4748869· OSTI ID:1051184

Look, D. C.; Droubay, T. C.; Chambers, S. A.

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2 produces a resistivity of ~ 1.5 x 10-4 Ω-cm, stable to 500 °C. Annealing on Zn foil reduces to ~ 1.2 x 10-4 Ω-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

• Research Organization: Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC05-76RL01830
• OSTI ID: 1051184
• Report Number(s): PNNL-SA-89053; APPLAB; 35200; KC0203020; TRN: US201218%%1289
• Journal Information: Applied Physics Letters, Vol. 101, Issue 10; ISSN 0003-6951
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
DEPOSITION
LASERS
VACANCIES
WAVELENGTHS
annealing
annealing
carrier mobility
doping profiles
electrical resistivity
gallium
II-VI semiconductors
plasmons
pulsed laser deposition
semiconductor doping
semiconductor growth
semiconductor thin films
vacancies (crystal)
wide band gap semiconductors
zinc compounds
Environmental Molecular Sciences Laboratory