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Title: Stable highly conductive ZnO via reduction of Zn vacancies

Abstract

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2 produces a resistivity of ~ 1.5 x 10-4 Ω-cm, stable to 500 °C. Annealing on Zn foil reduces to ~ 1.2 x 10-4 Ω-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.

Authors:
; ;
Publication Date:
Research Org.:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Org.:
USDOE
OSTI Identifier:
1051184
Report Number(s):
PNNL-SA-89053
Journal ID: ISSN 0003-6951; APPLAB; 35200; KC0203020; TRN: US201218%%1289
DOE Contract Number:  
AC05-76RL01830
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 101; Journal Issue: 10; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ANNEALING; DEPOSITION; LASERS; VACANCIES; WAVELENGTHS; annealing, annealing, carrier mobility, doping profiles, electrical resistivity, gallium, II-VI semiconductors, plasmons, pulsed laser deposition, semiconductor doping, semiconductor growth, semiconductor thin films, vacancies (crystal), wide band gap semiconductors, zinc compounds; Environmental Molecular Sciences Laboratory

Citation Formats

Look, D. C., Droubay, T. C., and Chambers, S. A. Stable highly conductive ZnO via reduction of Zn vacancies. United States: N. p., 2012. Web. doi:10.1063/1.4748869.
Look, D. C., Droubay, T. C., & Chambers, S. A. Stable highly conductive ZnO via reduction of Zn vacancies. United States. https://doi.org/10.1063/1.4748869
Look, D. C., Droubay, T. C., and Chambers, S. A. 2012. "Stable highly conductive ZnO via reduction of Zn vacancies". United States. https://doi.org/10.1063/1.4748869.
@article{osti_1051184,
title = {Stable highly conductive ZnO via reduction of Zn vacancies},
author = {Look, D. C. and Droubay, T. C. and Chambers, S. A.},
abstractNote = {Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2 produces a resistivity of ~ 1.5 x 10-4 Ω-cm, stable to 500 °C. Annealing on Zn foil reduces to ~ 1.2 x 10-4 Ω-cm, one of the lowest values ever reported. The key is reducing the Zn-vacancy acceptor concentration NA to 5 x 1019, only 3% of the Ga-donor concentration ND of 1.6 x 1021 cm-3, with ND and NA determined from a degenerate mobility theory. The plasmonic wavelength is 1060 nm, further bridging the gap between metals and semiconductors.},
doi = {10.1063/1.4748869},
url = {https://www.osti.gov/biblio/1051184}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 10,
volume = 101,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2012},
month = {Sun Jan 01 00:00:00 EST 2012}
}