Potential thermoelectric performance from optimization of hole-doped Bi2Se3

Journal Article · Sat Jan 01 00:00:00 EST 2011 · Physical Review X

DOI:https://doi.org/10.1103/PhysRevX.1.021005· OSTI ID:1050301

Parker, David S ^[1]; Singh, David J ^[1]

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1. ORNL

We present an analysis of the potential thermoelectric performance of hole-doped Bi2Se3, which is commonly considered to show inferior room temperature performance when compared to Bi2Te3. We find that if the lattice thermal conductivity can be reduced by nanostructuring techniques (as have been applied to Bi2Te3) the material may show optimized ZT values of unity or more in the 300 - 500 K temperature range and thus be suitable for cooling and moderate temperature waste heat recovery and thermoelectric solar cell applications. Central to this conclusion are the larger band gap and the relatively heavier valence bands of Bi2Se3.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Energy Efficiency and Renewable Energy (EERE)
• DOE Contract Number: DE-AC05-00OR22725
• OSTI ID: 1050301
• Journal Information: Physical Review X, Vol. 1, Issue 2; ISSN 2160-3308
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
OPTIMIZATION
PERFORMANCE
SOLAR CELLS
THERMAL CONDUCTIVITY
VALENCE
WASTE HEAT
thermoelectric
transport