Atomic and Electronic Structures of the SrVO3-LaAlO3 Interface
- University of California, Davis
- ORNL
- Lawrence Livermore National Laboratory (LLNL)
- University of California, Berkeley
- University of Tokyo, Tokyo, Japan
The atomic and electronic structures at interfaces in thin films are typically different from the bulk and are vitally important in determining the physical properties of thin films. The interface between SrVO{sub 3}, chosen as a prototype for vanadium-based perovskite materials in this work, and LaAlO{sub 3} substrate is investigated by scanning transmission electron microscopy, electron energy-loss spectroscopy, and theoretical multi-electron calculations. Extra electrons have been detected on the interface layer by comparing the energy-loss near-edge structures of V-L{sub 3,2} edges to those from the film far from the interface. Monochromated EELS and theoretical calculations for SrVO{sub 3}, VO{sub 2}, and V{sub 2}O{sub 3} support this conclusion. The extra electrons appear to originate from a change in the local bonding configuration of V at the La-O terminated substrate surface as determined by Z-contrast imaging.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Shared Research Equipment Collaborative Research Center
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 1049771
- Journal Information:
- Journal of Applied Physics, Vol. 110, Issue 4; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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