Effective Control of the Charge and Magnetic States of Transition-Metal Atoms on Single-Layer Boron Nitride
Developing approaches to effectively control the charge and magnetic states is critical to the use of magnetic nanostructures in quantum information devices but is still challenging. Here we suggest that the magnetic and charge states of transition-metal (TM) doped single-layer boron-nitride (SLBN) systems can be easily controlled by the (internal) defect engineering and (external) electric fields (E{sub ext}). The relative positions and symmetries of the in-gap levels induced by defect engineering and the TM d-orbital energy levels effectively determine the charge states and magnetic properties of the TM/SLBN system. Remarkably, the application of an E{sub ext} can easily control the size of the crystal field splitting of the TM d orbitals and thus, leading to the spin crossover in TM/SLBN, which could be used as E{sub ext}-driven nonvolatile memory devices. Our conclusion obtained from TM/SLBN is valid generally in other TM adsorbed layered semiconductors.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1046906
- Report Number(s):
- NREL/JA-5900-55675; PRLTAO; TRN: US201215%%589
- Journal Information:
- Physical Review Letters, Vol. 108, Issue 20; Related Information: Article No. 206802; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ATOMS
BORON NITRIDES
CHARGE STATES
CRYSTAL FIELD
DEFECTS
ELECTRIC FIELDS
ENERGY LEVELS
MAGNETIC PROPERTIES
MEMORY DEVICES
NANOSTRUCTURES
QUANTUM INFORMATION
SPIN
charge states
magnetic properties
crystal field splitting
spin crossover