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Title: Influence of Surface Preparation on Scanning Kelvin Probe Microscopy and Electron Backscatter Diffraction Analysis of Cross Sections of CdTe/CdS Solar Cells

Conference ·

Electron backscatter diffraction (EBSD) provides information on the crystallographic structure of a sample, while scanning Kelvin probe microscopy (SKPM) provides information on its electrical properties. The advantage of these techniques is their high spatial resolution, which cannot be attained with any other techniques. However, because these techniques analyze the top layers of the sample, surface or cross section features directly influence the results of the measurements, and sample preparation is a main step in the analysis. In this work we investigated different methods to prepare cross sections of CdTe/CdS solar cells for EBSD and SKPM analyses. We observed that procedures used to prepare surfaces for EBSD are not suitable to prepare cross sections, and we were able to develop a process using polishing and ion-beam milling. This process resulted in very good results and allowed us to reveal important aspects of the cross section of the CdTe films. For SKPM, polishing and a light ion-beam milling resulted in cross sections that provided good data. We were able to observe the depletion region on the CdTe film and the p-n junction as well as the interdiffusion layer between CdTe and CdS. However, preparing good-quality cross sections for SKPM is not a reproducible process, and artifacts are often observed.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
DOE Contract Number:
AC36-08GO28308
OSTI ID:
1043780
Report Number(s):
NREL/CP-5200-53220; TRN: US201213%%458
Resource Relation:
Conference: Presented at the Materials Research Society Symposium: Compound Semiconductors for Energy Applications and Environmental Sustainability, 25-29 April 2011, San Francisco, California; Related Information: Paper No. 1324-D14-02; See NREL/CP-5200-51629 for preprint.
Country of Publication:
United States
Language:
English

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Characterization of AlxGa1−xAs/GaAs heterojunction bipolar transistor structures using cross-sectional scanning force microscopy journal February 2000
Electron backscatter diffraction and orientation imaging microscopy journal January 1997
Investigation of potential and electric field profiles in cross sections of CdTe/CdS solar cells using scanning Kelvin probe microscopy journal October 2010
Energetics and effects of planar defects in CdTe journal October 2001
Electron backscatter diffraction of CdTe thin films: Effects of CdCl2 treatment
  • Moutinho, H. R.; Dhere, R. G.; Romero, M. J.
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 26, Issue 4 https://doi.org/10.1116/1.2841523
journal July 2008