Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors
Abstract
Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.
- Authors:
- Publication Date:
- Research Org.:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE SC OFFICE OF SCIENCE (SC)
- OSTI Identifier:
- 1042162
- Report Number(s):
- BNL-97840-2012-JA
Journal ID: ISSN 0959-9428; JMACEP; TRN: US201212%%573
- DOE Contract Number:
- DE-AC02-98CH10886
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Materials Chemistry
- Additional Journal Information:
- Journal Volume: 20; Journal Issue: 27; Journal ID: ISSN 0959-9428
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; AFFINITY; ATOMIC FORCE MICROSCOPY; CHARGE CARRIERS; DEPOSITION; DIELECTRIC MATERIALS; HYSTERESIS; MODULATION; MORPHOLOGY; PENTACENE; PERFORMANCE; PHOTOEMISSION; POLYSTYRENE; PYRIDINE; SPECTROSCOPY; SUBSTRATES; THIN FILMS; TRANSISTORS; TRANSPORT; TRAPPING; X-RAY DIFFRACTION
Citation Formats
Kim, S, Jang, M, Yang, H, and Park, C. Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors. United States: N. p., 2011.
Web.
Kim, S, Jang, M, Yang, H, & Park, C. Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors. United States.
Kim, S, Jang, M, Yang, H, and Park, C. 2011.
"Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors". United States.
@article{osti_1042162,
title = {Effect of Pentacene-dielectric Affinity on Pentacene Thin Film Growth Morphology in Organic Field-effect Transistors},
author = {Kim, S and Jang, M and Yang, H and Park, C},
abstractNote = {Organic field-effect transistors (OFETs) are fabricated by depositing a thin film of semiconductor on the functionalized surface of a SiO{sub 2} dielectric. The chemical and morphological structures of the interface between the semiconductor and the functionalized dielectric are critical for OFET performance. We have characterized the effect of the affinity between semiconductor and functionalized dielectric on the properties of the semiconductor-dielectric interface. The crystalline microstructure/nanostructure of the pentacene semiconductor layers, grown on a dielectric substrate that had been functionalized with either poly(4-vinyl pyridine) or polystyrene (to control hydrophobicity), and grown under a series of substrate temperatures and deposition rates, were characterized by X-ray diffraction, photoemission spectroscopy, and atomic force microscopy. By comparing the morphological features of the semiconductor thin films with the device characteristics (field-effect mobility, threshold voltage, and hysteresis) of the OFET devices, the effect of affinity-driven properties on charge modulation, charge trapping, and charge carrier transport could be described.},
doi = {},
url = {https://www.osti.gov/biblio/1042162},
journal = {Journal of Materials Chemistry},
issn = {0959-9428},
number = 27,
volume = 20,
place = {United States},
year = {Sat Dec 31 00:00:00 EST 2011},
month = {Sat Dec 31 00:00:00 EST 2011}
}