Effect of Te Inclusions in CdZnTe Crystals at Different Temperatures
CdZnTe crystals often exhibit nonuniformities due to the presence of Te inclusions and dislocations. High concentrations of such defects in these crystals generally entail severe charge-trapping, a major problem in ensuring the device's satisfactory performance. In this study, we employed a high-intensity, high-spatial-resolution synchrotron x-ray beam as the ideal tool to generate charges by focusing it over the large Te inclusions, and then observing the carrier's response at room- and at low-temperatures. A high spatial 5-{micro}m resolution raster scan revealed the fine details of the presence of extended defects, like Te inclusions and dislocations in the CdZnTe crystals. A noticeable change was observed in the efficiency of electron charge collection at low temperature (1 C), but it was hardly altered at room-temperature.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1041856
- Report Number(s):
- BNL-97534-2012-JA; JAPIAU; TRN: US201212%%268
- Journal Information:
- Journal of Applied Physics, Vol. 109, Issue 4; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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