Defect Levels of Indium-doped CdMnTe Crystals

Journal Article · Sat Dec 31 00:00:00 EST 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3594715· OSTI ID:1041851

Kim, K; Bolotinikov, A; Camarda, G; Gul, R; Hossain, A; Yang, G; Cui, Y; James, R

Using photoluminescence (PL) and current deep-level transient spectroscopy (I-DLTS), we investigated the electronic defects of indium-doped detector-grade CdMnTe:In (CMT:In) crystals grown by the vertical Bridgman method. We similarly analyzed CdZnTe:In (CZT:In) and undoped CdMnTe (CMT) crystals grown under the amount of same level of excess Te and/or indium doping level to detail the fundamental properties of the electronic defect structure more readily. Extended defects, existing in all the samples, were revealed by synchrotron white beam x-ray diffraction topography and scanning electron microscopy. The electronic structure of CMT is very similar to that of CZT, with shallow traps, A-centers, Cd vacancies, deep levels, and Te antisites. The 1.1-eV deep level, revealed by PL in earlier studies of CZT and CdTe, were attributed to dislocation-induced defects. In our I-DLTS measurements, the 1.1-eV traps showed different activation energies with applied bias voltage and an exponential dependence on the trap-filling time, which are typical characteristics of dislocation-induced defects. We propose a new defect-trap model for indium-doped CMT crystals.

• Research Organization: Brookhaven National Lab. (BNL), Upton, NY (United States)
• Sponsoring Organization: USDOE SC OFFICE OF SCIENCE (SC)
• DOE Contract Number: DE-AC02-98CH10886
• OSTI ID: 1041851
• Report Number(s): BNL-97529-2012-JA; JAPIAU; TRN: US201212%%263
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 11; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
A CENTERS
BRIDGMAN METHOD
CADMIUM COMPOUNDS
CRYSTAL GROWTH
DEEP LEVEL TRANSIENT SPECTROSCOPY
DEFECTS
DISLOCATIONS
ELECTRONIC STRUCTURE
INDIUM
MANGANESE COMPOUNDS
PHOTOLUMINESCENCE
SCANNING ELECTRON MICROSCOPY
SPECTROSCOPY
SYNCHROTRONS
TOPOGRAPHY
TRANSIENTS
VACANCIES
X-RAY DIFFRACTION