Exploitation of a Self-limiting Process for Reproducible Formation of Ultrathin Ni(1-x)Pt(x) Silicide Films
This letter reports on a process scheme to obtain highly reproducible Ni{sub 1-x}Pt{sub x} silicide films of 3-6 nm thickness formed on a Si(100) substrate. Such ultrathin silicide films are readily attained by sputter deposition of metal films, metal stripping in wet chemicals, and final silicidation by rapid thermal processing. This process sequence warrants an invariant amount of metal intermixed with Si in the substrate surface region independent of the initial metal thickness, thereby leading to a self-limiting formation of ultrathin silicide films. The crystallographic structure, thickness, uniformity, and morphological stability of the final silicide films depend sensitively on the initial Pt fraction.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1041789
- Report Number(s):
- BNL-97467-2012-JA; APPLAB; TRN: US201212%%201
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 25; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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