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Title: Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors

Abstract

Using a discrete RC network with characteristics approximating those of a high-precision silicon microstrip sensor, we have explored the use of resistive charge division to estimate the position of charge deposition in the direction parallel to the length of the sensor strips. For an electrode with distributed resistance and capacitance of 600 k{Omega} and 12.5 pF, respectively (similar to values expected for a 10 cm long resistive silicon microstrip), we estimate the fractional resolution to be {+-}6.1% of the length of the sensor. We find this value to be independent of resistance, to depend weakly on strip capacitance, and to apply for both isolated single electrodes as well as sensors with multiple parallel electrodes with significant capacitive coupling between electrodes.

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1039534
Report Number(s):
SLAC-REPRINT-2012-075
Journal ID: ISSN 0168-9002; NIMAER; TRN: US1202163
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Journal Article
Journal Name:
Nucl.Instrum.Meth.A646:118-125,2011
Additional Journal Information:
Journal Volume: 646; Journal Issue: 1; Journal ID: ISSN 0168-9002
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CAPACITANCE; DEPOSITION; ELECTRODES; RESOLUTION; SENSORS; SILICON; Instrumentation,INST

Citation Formats

Carman, Jerome K, /UC, Santa Cruz, Fadeyev, Vitaliy, /UC, Santa Cruz, Mistry, Khilesh, /UC, Santa Cruz, Partridge, Richard, /SLAC, Schumm, Bruce A, /UC, Santa Cruz, Spencer, Edwin, /UC, Santa Cruz, Wilder, Max, and /UC, Santa Cruz. Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors. United States: N. p., 2012. Web.
Carman, Jerome K, /UC, Santa Cruz, Fadeyev, Vitaliy, /UC, Santa Cruz, Mistry, Khilesh, /UC, Santa Cruz, Partridge, Richard, /SLAC, Schumm, Bruce A, /UC, Santa Cruz, Spencer, Edwin, /UC, Santa Cruz, Wilder, Max, & /UC, Santa Cruz. Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors. United States.
Carman, Jerome K, /UC, Santa Cruz, Fadeyev, Vitaliy, /UC, Santa Cruz, Mistry, Khilesh, /UC, Santa Cruz, Partridge, Richard, /SLAC, Schumm, Bruce A, /UC, Santa Cruz, Spencer, Edwin, /UC, Santa Cruz, Wilder, Max, and /UC, Santa Cruz. 2012. "Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors". United States.
@article{osti_1039534,
title = {Longitudinal Resistive Charge Division in Multi-Channel Silicon Strip Sensors},
author = {Carman, Jerome K and /UC, Santa Cruz and Fadeyev, Vitaliy and /UC, Santa Cruz and Mistry, Khilesh and /UC, Santa Cruz and Partridge, Richard and /SLAC and Schumm, Bruce A and /UC, Santa Cruz and Spencer, Edwin and /UC, Santa Cruz and Wilder, Max and /UC, Santa Cruz},
abstractNote = {Using a discrete RC network with characteristics approximating those of a high-precision silicon microstrip sensor, we have explored the use of resistive charge division to estimate the position of charge deposition in the direction parallel to the length of the sensor strips. For an electrode with distributed resistance and capacitance of 600 k{Omega} and 12.5 pF, respectively (similar to values expected for a 10 cm long resistive silicon microstrip), we estimate the fractional resolution to be {+-}6.1% of the length of the sensor. We find this value to be independent of resistance, to depend weakly on strip capacitance, and to apply for both isolated single electrodes as well as sensors with multiple parallel electrodes with significant capacitive coupling between electrodes.},
doi = {},
url = {https://www.osti.gov/biblio/1039534}, journal = {Nucl.Instrum.Meth.A646:118-125,2011},
issn = {0168-9002},
number = 1,
volume = 646,
place = {United States},
year = {Thu May 03 00:00:00 EDT 2012},
month = {Thu May 03 00:00:00 EDT 2012}
}