Monolayer Graphene Growth on Ni(111) by Low Temperature Chemical Vapor Deposition
Journal Article
·
· Applied Physics Letters
OSTI ID:1037699
In contrast to the commonly employed high temperature chemical vapor deposition growth that leads to multilayer graphene formation by carbon segregation from the bulk, we demonstrate that below 600 C graphene can be grown in a self-limiting monolayer growth process. Optimum growth is achieved at {approx}550 C. Above this temperature, carbon diffusion into the bulk is limiting the surface growth rate, while at temperatures below {approx}500 C a competing surface carbide phase impedes graphene formation.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Sponsoring Organization:
- USDOE SC OFFICE OF SCIENCE (SC)
- DOE Contract Number:
- DE-AC02-98CH10886
- OSTI ID:
- 1037699
- Report Number(s):
- BNL-96413-2012-JA; APPLAB; KC020401H; TRN: US201207%%514
- Journal Information:
- Applied Physics Letters, Vol. 100, Issue 2; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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