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Title: Critical currents, magnetic relaxation, and pinning in NdBa2Cu3O7-delta films with BaZrO3-generated columnar defects

Abstract

The critical current density Jc and the magnetic relaxation ( creep ) properties have been studied for a set of NdBa2Cu3O7- (NdBCO) films doped with BaZrO3 (BZO) nanoparticles to form columnar defects. The dependence of Jc on the magnitude and orientation of the applied magnetic field Happ (0 6.5 T); and temperature T (5 K Tc) was investigated. The normalized flux-creep rate S = d ln(J ) / d ln(t) was determined as a function of T. The current dependence of the effective activation energy Ueff(J) was derived using the formalism developed by Maley. The results are well described by an inverse power-law type barrier of the form 0 0 ( ) ~ ( / ) eff U J U J J with fitted values for the pinning energy scale U0 and the glassy exponent . When comparing values for these parameters in the BZO-doped samples with those for their undoped control counterparts, the most striking difference is the larger scale of current density J0 in the doped samples (a factor of 2.4 higher), while the other pinning parameters do not differ strongly. In the BZO-doped materials, the pinning energy scale U0 increases with vortex density and J0 decreases, withmore » both following simple power law dependencies on field.« less

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [1]
  1. ORNL
  2. University of Tennessee, Knoxville (UTK)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
OE USDOE - Office of Electric Transmission and Distribution
OSTI Identifier:
1036577
DOE Contract Number:  
DE-AC05-00OR22725
Resource Type:
Journal Article
Journal Name:
Superconductor Science & Technology
Additional Journal Information:
Journal Volume: 25; Journal Issue: 4; Journal ID: ISSN 0953-2048
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ACTIVATION ENERGY; CREEP; CRITICAL CURRENT; CURRENT DENSITY; DEFECTS; MAGNETIC FIELDS; ORIENTATION; RELAXATION

Citation Formats

Ijaduola, Anota O, Wee, Sung Hun, Goyal, Amit, Martin, Patrick M, Li, Jing, Thompson, J. R., and Christen, David K. Critical currents, magnetic relaxation, and pinning in NdBa2Cu3O7-delta films with BaZrO3-generated columnar defects. United States: N. p., 2012. Web. doi:10.1088/0953-2048/25/4/045013.
Ijaduola, Anota O, Wee, Sung Hun, Goyal, Amit, Martin, Patrick M, Li, Jing, Thompson, J. R., & Christen, David K. Critical currents, magnetic relaxation, and pinning in NdBa2Cu3O7-delta films with BaZrO3-generated columnar defects. United States. https://doi.org/10.1088/0953-2048/25/4/045013
Ijaduola, Anota O, Wee, Sung Hun, Goyal, Amit, Martin, Patrick M, Li, Jing, Thompson, J. R., and Christen, David K. 2012. "Critical currents, magnetic relaxation, and pinning in NdBa2Cu3O7-delta films with BaZrO3-generated columnar defects". United States. https://doi.org/10.1088/0953-2048/25/4/045013.
@article{osti_1036577,
title = {Critical currents, magnetic relaxation, and pinning in NdBa2Cu3O7-delta films with BaZrO3-generated columnar defects},
author = {Ijaduola, Anota O and Wee, Sung Hun and Goyal, Amit and Martin, Patrick M and Li, Jing and Thompson, J. R. and Christen, David K},
abstractNote = {The critical current density Jc and the magnetic relaxation ( creep ) properties have been studied for a set of NdBa2Cu3O7- (NdBCO) films doped with BaZrO3 (BZO) nanoparticles to form columnar defects. The dependence of Jc on the magnitude and orientation of the applied magnetic field Happ (0 6.5 T); and temperature T (5 K Tc) was investigated. The normalized flux-creep rate S = d ln(J ) / d ln(t) was determined as a function of T. The current dependence of the effective activation energy Ueff(J) was derived using the formalism developed by Maley. The results are well described by an inverse power-law type barrier of the form 0 0 ( ) ~ ( / ) eff U J U J J with fitted values for the pinning energy scale U0 and the glassy exponent . When comparing values for these parameters in the BZO-doped samples with those for their undoped control counterparts, the most striking difference is the larger scale of current density J0 in the doped samples (a factor of 2.4 higher), while the other pinning parameters do not differ strongly. In the BZO-doped materials, the pinning energy scale U0 increases with vortex density and J0 decreases, with both following simple power law dependencies on field.},
doi = {10.1088/0953-2048/25/4/045013},
url = {https://www.osti.gov/biblio/1036577}, journal = {Superconductor Science & Technology},
issn = {0953-2048},
number = 4,
volume = 25,
place = {United States},
year = {Sun Jan 01 00:00:00 EST 2012},
month = {Sun Jan 01 00:00:00 EST 2012}
}