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Title: Epitaxial Cr on n-SrTiO3(001)—An ideal Ohmic contact

Journal Article · · Applied Physics Letters, 100(5):052106
DOI:https://doi.org/10.1063/1.3680608· OSTI ID:1036053

Epitaxial Cr metallizations grown on n-SrTiO3(001) by molecular beam epitaxy are shown to result in an ordered interface with Cr bound to O in the terminal TiO2 layer, no reduction of the SrTiO3, and a near-perfect Ohmic contact. Cr/n-SrTiO3(001) thus constitutes an ideal interface between a pure metal and wide gap oxide in which interface redox chemistry does not occur, and the Fermi level remains unpinned.

Research Organization:
Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC05-76RL01830
OSTI ID:
1036053
Report Number(s):
PNNL-SA-83506; APPLAB; 35200; KC0201050; TRN: US201205%%570
Journal Information:
Applied Physics Letters, 100(5):052106, Vol. 100, Issue 5; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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